1998. 6. 15 1/1 semiconductor technical data KTC3883 epitaxial planar npn transistor revision no : 2 high frequency application. vhf band amplifier application. features high current : i c(max) =200ma. high transition frequency : f t =500mhz(typ.). low voltage operating. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) h rank type name marking lot no. ae fe characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =20v, i c =0 - - 0.4 a emitter cut-off current i ebo v eb =2v, i c =0 - - 1.0 a dc current gain h fe (note) v ce =1v, i c =10ma 55 - 140 - transition frequency f t v ce =10v, i c =10ma 500 - - mhz collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.25 v collector output capacitance c ob v cb =10v, i e =0, f=1mhz - - 3.0 pf characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 4 v collector current i c 200 ma collector power dissipation p c 150 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 note) h fe classification o : 55 140
|
